ZXTC6718MC document number: ds31927 rev. 4 - 2 1 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC6718MC complementary 20v low saturation transistors features npn transistor ? bv ceo > 20v ? i c = 4.5a continuous collector current ? low saturation voltage (150mv max @ 1a) ? r sat = 47m? for a low equivalent on-resistance pnp transistor ? bv ceo > -20v ? i c = -3.5a continuous collector current ? low saturation voltage (-220mv max @ -1a) ? r sat = 64m? for a low equivalent on-resistance ? h fe characterized up to 6a for high current gain hold up ? low profile 0.8mm high package for thin applications ? r ja efficient, 40% lower than sot26 ? 6mm 2 footprint, 50% smaller than tsop6 and sot26 ? lead-free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: w-dfn3020-8 type b ? nominal package height: 0.8mm ? case material: molded plastic. ?green? molding compound. ? ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - nipdau, solderable per mil-std-202, method 208 ? weight: 0.013 grams (approximate) applications ? dc ? dc converters ? charging circuits ? power switches ? motor control ? led backlighting circuits ? portable applications ordering information (note 4 & 5) product compliance marking reel size (inches) tape width (mm) quantity per reel ZXTC6718MCta aec-q101 db2 7 8 3,000 ZXTC6718MCqta automotive db2 7 8 3,000 notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (roh s 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and are ppap capabl e. automotive, aec-q101 and standard products are electrically and thermally the same, except where specified. 5. for packaging details, go to our website at http://www.diodes.com marking information db2 = product type marking code top view, dot denotes pin 1 equivalent circuit top view bottom view pin-out npn transistor w-dfn3020-8 type b bottom view c 1 e 1 b 1 c 2 e 2 b2 pnp transistor c2 c2 c1 c1 e2 b2 e1 b1 c2 c1 pin 1 db2 e4
ZXTC6718MC document number: ds31927 rev. 4 - 2 2 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC6718MC maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol npn pnp unit collector-base voltage v cbo 40 -25 v collector-emitter voltage v ceo 20 -20 v emitter-base voltage v ebo 7 -7 v peak pulse current i cm 12 -6 a continuous collector current (notes 6 & 9) i c 4.5 -3.5 a continuous collector current (notes 7 & 9) 5 -3.8 base current i b 1 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol npn pnp unit power dissipation linear derating factor (notes 6 & 9) p d 1.5 12 w mw/ c (notes 7 & 9) 2.45 19.6 (notes 8 & 9) 1.13 8 (notes 8 & 10) 1.7 13.6 thermal resistance, junction to ambient (notes 6 & 9) r ja 83.3 c/w (notes 7 & 9) 51.0 (notes 8 & 9) 111 (notes 8 & 10) 73.5 thermal resistance, junction to lead (notes 9 & 11) r jl 17.1 operating and storage temperature range t j , t stg -55 to +150 c notes: 6. for a dual device surface mounted on 28mm x 28mm (8cm 2 ) fr4 pcb with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. t he heatsink is split in half with the exposed collector pads connected to each half. 7. same as note (6), except the device is measured at t <5 sec. 8. same as note (6), except the devic e is surface mounted on 31mm x 31mm (10cm 2 ) fr4 pcb with high coverage of single sided 1oz copper. 9. for a dual device with one active die. 10. for dual device with 2 active die running at equal power. 11. thermal resistance from junction to solder-point (on the exposed collector pads).
ZXTC6718MC document number: ds31927 rev. 4 - 2 3 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC6718MC thermal characteristics and derating information 0.1 1 10 0.01 0.1 1 10 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 0.1 1 10 100 0 25 50 75 100 125 150 175 200 225 100m 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.1 1 10 0.01 0.1 1 10 8sqcm 2oz cu one active die 100us 100ms 1s v ce(sat) limited 1ms npn safe operating area single pulse, t amb =25c dc 10ms i c collector current (a) v ce collector-emitter voltage (v) 10sqcm 1oz cu one active die 10sqcm 1oz cu two active die 8sqcm 2oz cu one active die derating curve max power dissipation (w) temperature (c) 8sqcm 2oz cu one active die d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) 1oz cu two active die 1oz cu one active die 2oz cu once active die 2oz cu two active die thermal resistance v board area thermal resistance (c/w) board cu area (sqcm) 1oz cu one active die 1oz cu two active die 2oz cu one active die 2oz cu two active die t amb =25c t j max =150c continuous power dissipation v board area p d dissipation (w) board cu area (sqcm) 8sqcm 2oz cu one active die 100us 1ms 10ms 100ms 1s dc single pulse, t amb =25c v ce(sat) limited pnp safe operating area -i c collector current (a) -v ce collector-emitter voltage (v)
ZXTC6718MC document number: ds31927 rev. 4 - 2 4 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC6718MC npn - electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 40 100 - v i c = 100a collector-emitter breakdown voltage (note 12) bv ceo 20 27 - v i c = 10ma emitter-base breakdown voltage bv ebo 7 8.2 - v i e = 100a collector cutoff current i cbo - - 100 na v cb = 30v emitter cutoff current i ebo - - 100 ?na v eb = 6v collector emitter cutoff current i ces - - 100 na v ce = 16v static forward current transfer ratio (note 12) h fe 200 300 200 100 400 450 360 180 - - - - - - - - i c = 10ma, v ce = 2v i c = 200ma, v ce = 2v i c = 2a, v ce = 2v i c = 6a, v ce = 2v collector-emitter saturation voltage (note 12) v ce(sat) - 8 90 115 190 210 15 150 135 250 300 mv i c = 0.1a, i b = 10ma i c = 1a, i b = 10ma i c = 2a, i b = 50ma i c = 3a, i b = 100ma i c = 4.5a, i b = 125ma base-emitter turn-on voltage (note 12) v be ( on ) - 0.88 0.97 v i c = 4.5a, v ce = 2v base-emitter saturation voltage (note 12) v be ( sat ) - 0.98 1.07 v i c = 4.5a, i b = 125ma output capacitance c obo - 23 30 pf v cb = 10v, f = 1mhz transition frequency f t 100 140 - mhz v ce = 10v, i c = 50ma, f = 100mhz turn-on time t on - 170 - ns v cc = 10v, i c = 3a i b1 = i b2 = 10ma turn-off time t off - 400 - ns notes: 12. measured under pulsed conditions. pulse width 300s. duty cycle 2%.
ZXTC6718MC document number: ds31927 rev. 4 - 2 5 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC6718MC npn - typical electri cal characteristics (@t a = +25c, unless otherwise specified.) 1m 10m 100m 1 10 1m 10m 100m 1m 10m 100m 1 10 0.00 0.05 0.10 0.15 0.20 0.25 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 0 90 180 270 360 450 540 630 v ce(sat) v i c tamb=25c i c /i b =100 i c /i b =50 i c /i b =10 v ce(sat) (v) i c collector current (a) v be(sat) v i c i c /i b =50 100c 25c -55c v ce(sat) (v) i c collector current (a) h fe v i c v ce =2v -55c 25c 100c normalised gain i c collector current (a) 25c v ce(sat) v i c i c /i b =50 100c -55c v be(sat) (v) i c collector current (a) v be(on) v i c v ce =2v 100c 25c -55c v be(on) (v) i c collector current (a) typical gain (h fe )
ZXTC6718MC document number: ds31927 rev. 4 - 2 6 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC6718MC pnp - electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo -25 -35 - v i c = -100a collector-emitter breakdown voltage (note 12) bv ceo -20 -25 - v i c = -10ma emitter-base breakdown voltage bv ebo -7 -8.5 - v i e = -100a collector cutoff current i cbo - - -100 na v cb = -20v emitter cutoff current i ebo - - -100 ?na v eb = -6v collector emitter cutoff current i ces - - -100 na v ces = -16v static forward current transfer ratio (note 12) h fe 300 300 150 15 475 450 230 30 - - - - - i c = -10ma, v ce = -2v i c = -100ma, v ce = -2v i c = -2a, v ce = -2v i c = -6a, v ce = -2v collector-emitter saturation voltage (note 12) v ce(sat) - - - - - -19 -170 -190 -240 -225 -30 -220 -250 -350 -300 mv i c = -0.1a, i b = -10ma i c = -1a, i b = -20ma i c = -1.5a, i b = -50ma i c = -2.5a, i b = -150ma i c = -3.5a, i b = -350ma base-emitter turn-on voltage (note 12) v be ( on ) - -0.87 -0.95 v i c = -3.5a, v ce = -2v base-emitter saturation voltage (note 12) v be ( sat ) - -1.01 -1.12 v i c = -3.5a, i b = -350ma output capacitance c obo - 21 30 pf v cb = -10v. f = 1mhz transition frequency f t 150 180 - mhz v ce = -10v, i c = -50ma, f = 100mhz turn-on time t on - 40 - ns v cc = -10v, i c = -1a i b1 = i b2 = -10ma turn-off time t off - 670 - ns notes: 12. measured under pulsed conditions. pulse width 300s. duty cycle 2%.
ZXTC6718MC document number: ds31927 rev. 4 - 2 7 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC6718MC pnp - typical electrical characteristics (@t a = +25c, unless otherwise specified.) 1m 10m 100m 1 10 10m 100m 1 1m 10m 100m 1 10 0.00 0.05 0.10 0.15 0.20 0.25 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1m 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 0 90 180 270 360 450 540 630 v ce(sat) v i c tamb=25c i c /i b =100 i c /i b =50 i c /i b =10 v ce(sat) (v) i c collector current (a) v be(sat) v i c i c /i b =50 100c 25c -55c v ce(sat) (v) i c collector current (a) h fe v i c v ce =2v -55c 25c 100c normalised gain i c collector current (a) 25c v ce(sat) v i c i c /i b =50 100c -55c v be(sat) (v) i c collector current (a) v be(on) v i c v ce =2v 100c 25c -55c v be(on) (v) i c collector current (a) typical gain (h fe )
ZXTC6718MC document number: ds31927 rev. 4 - 2 8 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC6718MC package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. w-dfn3020-8 type b dim min max typ a 0.77 0.83 0.80 a1 0 0.05 0.02 a3 - - 0.15 b 0.25 0.35 0.30 d 2.95 3.075 3.00 d2 0.82 1.02 0.92 d4 1.01 1.21 1.11 e - - 0.65 e 1.95 2.075 2.00 e2 0.43 0.63 0.53 l 0.25 0.35 0.30 z - - 0.375 all dimensions in mm dimensions value (in mm) c 0.650 g 0.285 g1 0.090 x 0.400 x1 1.120 y 0.730 y1 0.500 y2 0.365 b e e2 d2 l d e a z a1 a3 d4 d4 c x1 g1 x y1 y y2 g
ZXTC6718MC document number: ds31927 rev. 4 - 2 9 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC6718MC important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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